| PART |
Description |
Maker |
| C1206C225K3NACTU |
Ceramic, 150C-(CxxxxC), 2.2 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| C1206C105K3NACTU |
Ceramic, 150C-(CxxxxC), 1 uF, 10%, 25 V, 1206, X8L, SMD, MLCC, High Temperature, Temperature Stable
|
Kemet Corporation
|
| T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs
High temperature 10 A sensitive TRIACs
600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics
STMicroelectronics
|
| SIP-1987HT-01-1001FC SIP-1987HT-01-1001FD SIP-1987 |
TaNFilm垄莽 High Temperature DIP and SIP Networks
TaNFilm庐 High Temperature DIP and SIP Networks
TaNFilm? High Temperature DIP and SIP Networks
|
IRC - a TT electronics Company.
|
| A3121UA A3121LUA A3121EU A3123LUA 3122 3121 A3123U |
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Hall Effect switch For High-Temperature Operation(工作于高温的霍尔效应开
HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应开关高温作
Audio CODEC IC; IC Function:Audio Codec; Package/Case:28-SSOP; Interface Type:Serial; Leaded Process Compatible:No; No. of Bits:24; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 霍尔效应开关高温作
KPT 18C 18#20 PIN PLUG 霍尔效应开关高温作
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| EL2223 EL2223C EL2223J EL2223CJ EL2223L/883B EL222 |
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-SOIC
Laser Diode Driver with Waveform Generator; Temperature Range: 0°C to 70°C; Package: 28-QFN T&R
12-Bit, 3.3V, 130MSPS, CommLinkTM High Speed D/A Converter (TSSOP); Temperature Range: -40°C to 85°C; Package: 28-TSSOP
High Speed Operational Amplifier
Dual, 500 MHz High Speed, Operational Amplifier
|
Elantec Semiconductor
|
| T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC
High temperature 20 A Snubberless TRIACs
High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| SMA6J5.06.0A-TR SMA6J12A-TR SMA6J33A-TR SMA6J13A-T |
High junction temperature Transil TM 高结温Transil商标
High junction temperature Transil TM 高结Transil商标
|
意法半导
STMicroelectronics N.V.
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
|
